281 silicon mos fets (small signal) 2SK0620 (2sk620) silicon n-channel mos fet for switching features high-speed switching mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. absolute maximum ratings (ta = 25c) parameter drain to source breakdown voltage gate to source voltage drain current max drain current allowable power dissipation channel temperature storage temperature symbol v dss v gso i d i dp p d t ch t stg ratings 50 8 100 200 150 150 ? 55 to +150 unit v v ma ma mw c c electrical characteristics (ta = 25c) parameter drain to source cut-off current gate to source leakage current drain to source breakdown voltage gate threshold voltage drain to source on-resistance forward transfer admittance input capacitance (common source) output capacitance (common source) reverse transfer capacitance (common source) turn-on time turn-off time symbol i dss i gss v dss v th r ds(on) | y fs | c iss c oss c rss t on * t off * conditions v ds = 10v, v gs = 0 v gs = 8v, v ds = 0 i d = 100 a, v gs = 0 i d = 100 a, v ds = v gs i d = 20ma, v gs = 5v i d = 20ma, v ds = 5v, f = 1khz v ds = 5v, v gs = 0, f = 1mhz v dd = 5v, v gs = 0 to 5v, r l = 200 ? v dd = 5v, v gs = 5 to 0v, r l = 200 ? * t on , t off measurement circuit min 50 1.5 20 typ 30 10 20 unit a na v v ? ms pf pf pf ns ns max 10 50 3.5 50 15 5 1 1: gate jedec: to-236 2: source eiaj: sc-59 3: drain mini3-g1 package 0.40 +0.10 0.05 (0.65) 1.50 +0.25 0.05 2.8 +0.2 0.3 2 1 3 (0.95) (0.95) 1.9 0.1 2.90 +0.20 0.05 0.16 +0.10 0.06 0.4 0.2 5 10 0 to 0.1 1.1 +0.2 0.1 1.1 +0.3 0.1 v out v dd = 5v v gs = 5v 50 ? 200 ? 100 f v in 90% 10% 10% 90% v out t on t off marking symbol: 3n internal connection g d s note) the part number in the parenthesis shows conventional part number. unit: mm maintenance/ discontinued maintenance/discontinued includes following four product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type please visit following url about latest information. http://panasonic.net/sc/en
282 silicon mos fets (small signal) p d ta i d v ds | y fs | v gs c iss , c oss , c rss v ds i d v gs r ds(on) v gs v in i o 2SK0620 0 160 40 120 80 140 20 100 60 0 240 200 160 120 80 40 ambient temperature ta ( ? c ) allowable power dissipation p d ( mw ) 012 10 8 26 4 0 120 100 80 60 40 20 v gs =6.0v 5.5v 5.0v 4.5v 3.5v 2.5v 3.0v 4.0v ta=25 ? c drain to source voltage v ds ( v ) drain current i d ( ma ) 012 10 8 26 4 0 60 50 40 30 20 10 v ds =5v ta=25 ? c gate to source voltage v gs ( v ) forward transfer admittance |y fs | ( ms ) 1 3 10 30 100 0 12 10 8 6 4 2 v gs =0 f=1mhz ta=25 ? c c iss c oss c rss drain to source voltage v ds ( v ) input capacitance ( common source ) , output capacitance ( common source ) , reverse transfer capacitance ( common source ) c iss ,c oss ,c rss ( pf ) 012 10 8 26 4 0 120 100 80 60 40 20 ta= e 25 ? c 25 ? c 75 ? c v ds =5v ta=25 ? c gate to source voltage v gs ( v ) drain current i d ( ma ) 012 10 8 26 4 0 120 100 80 60 40 20 i d =20ma ta=75 ? c 25 ? c e 25 ? c gate to source voltage v gs ( v ) drain to source on-resistance r ds(on) ( ) 0.1 1 10 100 0.3 3 30 0.01 0.03 0.1 0.3 1 3 10 30 100 v o =5v ta=25 ? c output current i o ( ma ) input voltage v in ( v )
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